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We describe a pulsed measurement technique to suppress hysteresis for carbonnanotube (CNT) device measurements in air, vacuum, and over a wide temperaturerange (80-453 K). Varying the gate pulse width and duty cycle probes therelaxation times associated with charge trapping near the CNT, found to be upto the 0.1-10 s range. Longer off times between voltage pulses enableconsistent, hysteresis-free measurements of CNT mobility. A tunneling frontmodel for charge trapping and relaxation is also described, suggesting trapdepths up to 4-8 nm for CNTs on SiO2. Pulsed measurements will also beapplicable to other nanoscale devices such as graphene, nanowires, andmolecular electronics, and could enable probing trap relaxation times in avariety of material system interfaces.

Reduction of Hysteresis for Carbon Nanotube Mobility Measurements Using Pulsed Characterization