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We present ion beam erosion experiments performed in ultra high vacuum usinga differentially pumped ion source and taking care that the ion beam hits theSi(001) sample only. Under these conditions no ion beam patterns form on Si forangles below 45 degrees with respect to the global surface normal using 2 keVKr ions and fluences of 2 x 10^22 ions/m^2. In fact, the ion beam induces asmoothening of preformed patterns. Simultaneous sputter deposition of stainlesssteel in this angular range creates a variety of patterns, similar to thosepreviously ascribed to clean ion beam induced destabilization of the surfaceprofile. Only for grazing incidence with incident angles between 60 degrees and83 degrees pronounced ion beam patterns form. It appears that the angulardependent stability of Si(001) against pattern formation under clean ion beamerosion conditions is related to the angular dependence of the sputteringyield, and not primarily to a curvature dependent yield as invoked frequentlyin continuum theory models.

Is keV ion induced pattern formation on Si(001) caused by metal impurities?