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Electronic devices that are designed to use the properties of single atomssuch as donors or defects have become a reality with recent demonstrations ofdonor spectroscopy, single photon emission sources, and magnetic imaging usingdefect centers in diamond. Improving single ion detector sensitivity is linkedto improving control over the straggle of the ion as well as providing moreflexibility in lay-out integration with the active region of the single donordevice construction zone by allowing ion sensing at potentially greaterdistances. Using a remotely located passively gated single ion Geiger modeavalanche diode (SIGMA) detector we have demonstrated 100% detection efficiencyat a distance of >75 um from the center of the collecting junction. Thisdetection efficiency is achieved with sensitivity to ~600 or fewerelectron-hole pairs produced by the implanted ion. Ion detectors with thissensitivity and integrated with a thin dielectric, for example 5 nm gate oxide,using low energy Sb implantation would have an end of range straggle of <2.5nm. Significant reduction in false count probability is achieved by modifyingthe ion beam set-up to allow for cryogenic operation of the SIGMA detector.Using a detection window of 230 ns at 1 Hz, the probability of a false countwas measured as 1E-1 and 1E-4 for operation temperatures of 300K and 77K,respectively. Low temperature operation and reduced false, dark, counts arecritical to achieving high confidence in single ion arrival. For the deviceperformance in this work, the confidence is calculated as a probability of >98%for counting one and only one ion for a false count probability of 1E-4 at anaverage ion number per gated window of 0.015.

Single ion implantation for single donor devices using Geiger mode detectors