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We have developed a method for depositing graphene monolayers and bilayerswith minimum lateral dimensions of 2-10 nm by the mechanical exfoliation ofgraphite onto the Si(100)-2x1:H surface. Room temperature, ultra-high vacuum(UHV) tunnelling spectroscopy measurements of nanometer-sized single-layergraphene reveal a size dependent energy gap ranging from 0.1-1 eV. Furthermore,the number of graphene layers can be directly determined from scanningtunnelling microscopy (STM) topographic contours. This atomistic study providesan experimental basis for probing the electronic structure of nanometer-sizedgraphene which can assist the development of graphene-based nanoelectronics.

Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunnelling microscopy