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We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <=B <= 12 T) dependences of longitudinal and Hall resistivities for thep-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-rangerandom impurity potential (the model with randomly distributed charged centerslocated outside the conducting layer and the model of the system with a spacer)are used for evaluation of the impurity potential fluctuation characteristics:the random potential amplitude, nonlinear screening length in vicinity ofinteger filling factors nu = 1 and nu = 2 and the background density of state(DOS). The described models are suitable for explanation of the unusually highvalue of DOS at nu = 1 and nu = 2, in contrast to the short-range impuritypotential models. For half-integer filling factors the linear temperaturedependence of the effective QHE plateau-to-plateau transition width nu_0(T) isobserved in contrast to scaling behavior for systems with short-range disorder.The finite T -> 0 width of QHE transitions may be due to an effective lowtemperature screening of smooth random potential owing to Coulomb repulsion ofelectrons.Comment: Accepted for publication in Nanotechnolog

nanotechnology

The key role of a smooth impurity potential in formation of the hole spectrum for p-Ge/Ge1-xSixheterostructures in the quantum Hall regime