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Low frequency shot noise and dc current profiles for a double-barrierresonant-tunneling structure (DBRTS) under a strong magnetic field appliedperpendicular to the interfaces have been studied. Both the structures with 3Dand 2D emitter have been considered. The calculations, carried out with theKeldysh Green's function technique, show strong dependencies of both thecurrent and noise profiles on the bias voltage and magnetic field. The noisespectrum appears sensitive to charge accumulation due to barriere capacitancesand both noise and dc-current are extremely sensitive to the Landau levels'broadening in the emitter electrode and can be used as a powerful tool toinvestigate the latter. As an example, two specific shapes of the levels'broadening have been considered - a semi-elliptic profile resulting fromself-consistent Born approximation, and a Gaussian one resulting from thelowest order cumulant expansion.Comment: 15 pages Revtex, 8 Postscript figures included. To be published in  Journal of Physics: Condensed matte

Low-frequency shot noise in double-barrier resonant-tunnelling structures in a strong magnetic field