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Valley filters are crucial to any device exploiting the valley degree offreedom. By using an atomistic model, we analyze the mechanism leading to thevalley filtering produced by a line-defect in graphene and show how it can beinverted by external means. Thanks to a mode decomposition applied to atight-binding model we can resolve the different transport channels in k-spacewhile keeping a simple but accurate description of the band structure, bothclose and further away from the Dirac point. This allows the understanding of adestructive interference effect (Fano resonance or antiresonance) on the p-sideof the Dirac point leading to a reduced conductance. We show that in theneighborhood of this feature the valley filtering can be reversed by changingthe occupations with a gate voltage, the mechanism is explained in terms of avalley-dependent Fano resonance splitting. Our results open the door for anenhanced control of valley transport in graphene-based devices.

Valley filtering by a line-defect in graphene: quantum interference and inversion of the filter effect