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We present a scanning tunneling microscopy (STM) study of native defects ingraphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene onCu(111). We characterize these defects through a survey of their apparentheights, atomic-resolution imaging, and detailed tunneling spectroscopy. Brightdefects that occur only in graphene regions are identified as C site pointdefects in the graphene lattice and are most likely single C vacancies. Darkdefect types are observed in both graphene and Cu regions, and are likely pointdefects in the Cu surface. We also present data showing the importance of biasand tip termination to the appearance of the defects in STM images and theability to achieve atomic resolution. Finally, we present tunnelingspectroscopy measurements probing the influence of point defects on the localelectronic landscape of graphene islands.

Native defects in ultra-high vacuum grown graphene islands on Cu(111)