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The 3-layer (3R) polytype of TaSe2-xTex shows a superconducting transitiontemperature that is between 6 and 17 times higher than that of the two-layer(2H) polytype. The remarkable difference in Tc, although clearly associatedwith a difference in polytype, could have been due to an electronic effectspecific to the Te-Se substitution. Here we report that small amounts of Mo orW doping lead to a 2H to 3R polytype transition in Ta1-xMoxSe2 and Ta1-xWxSe2.The 3R polytype materials are again found to have substantially higher Tcs (~ 2K for Ta0.9W0.1Se2 and Ta0.9Mo0.1Se2) than the 2H material (0.15 K). Thiseliminates the possibility that any special characteristics of the Te/Sesubstitution are responsible for the dramatic difference in Tc, and insteadshows that a three-layer stacking sequence is strongly preferred forsuperconductivity over a two-layer stacking sequence in the TaSe2 system.

Superconductivity in 3R-Ta1-xMxSe2 (M = W, Mo)