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The ferrimagnetic Heusler compound Mn2VGa is predicted to have a pseudogap inthe majority spin channel, which should lead to a negative tunnelmagnetoresistance. We synthesized epitaxial Mn2VGa thin films on MgO(001)substrates by dc and rf magnetron co-sputtering, resulting in nearlystoichiometric films. XRD analysis revealed a mostly B2-ordered structure forthe films deposited at substrate temperatures of 350{\deg}C, 450{\deg}C, and550{\deg}C. Magnetic tunnel junctions with MgO barrier and CoFecounter-electrodes were fabricated. After post-annealing at up toT_a=425{\deg}C negative TMR was obtained around zero bias, providing evidencefor the inverted spin-polarization. Band structures of both electrodes werecomputed within the coherent potential approximation and used to calculate theTMR(V) characteristics, which are in good agreement with our experimentalfindings.

Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance