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The electronic properties of polycrystalline lead oxide consisting of anetwork of single-crystalline $\alpha$-PbO platelets and the formation of thenative point defects in $\alpha$-PbO crystal lattice are studied using firstprinciples calculations. The $\alpha$-PbO lattice consists of coupled layersinteraction between which is too low to produce high efficiency interlayercharge transfer. In practice, the polycrystalline nature of $\alpha$-PbO causesthe formation of lattice defects in such a high concentration thatdefect-related conductivity becomes the dominant factor in the interlayercharge transition. We found that the formation energy for the O vacancies islow, such vacancies are occupied by two electrons in the zero charge state andtend to donate their electrons to the Pb vacancies that leads to ionization ofboth vacancies.The vacancies introduce localized states in the band gap whichcan affect charge transport. The O vacancy forms a defect state at 1.03 eVabove the valence band which can act as a deep trap for electrons, while the Pbvacancy forms a shallow trap for holes located just 0.1 eV above the valenceband. Charge de-trapping from O vacancies can be accounted for theexperimentally found dark current decay in ITO/PbO/Au structures.

Lead monoxide $\alpha$-PbO: electronic properties and point defect formation