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We present a combined experimental-theoretical study demonstrating the roleof site disorder, off-stoichiometry and strain on the optical behavior ofmagnetoelectric gallium ferrite. Optical properties such as band-gap,refractive indices and dielectric constants were experimentally obtained byperforming ellipsometric studies over the energy range 0.8 eV to 4.2 eV onpulsed laser deposited epitaxial thin films of stoichiometric gallium ferritewith b-axis orientation and the data was compared with theoretical results.Calculations on the ground state structure show that the optical activity inGaFeO3 arises primarily from O2p-Fe3d transitions. Further, inclusion of sitedisorder and epitaxial strain in the ground state structure significantlyimproves the agreement between the theory and the room temperature experimentaldata substantiating the presence of site-disorder in the experimentally derivedstrained GaFeO3 films at room temperature. We attribute the modification of theground state optical behavior upon inclusion of site disorder to thecorresponding changes in the electronic band structure, especially in Fe3dstates leading to a lowered band-gap of the material.

Effect of Site-disorder, Off-stoichiometry and Epitaxial Strain on the Optical Properties of Magnetoelectric Gallium Ferrite