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Physical properties of Si(111)-7x7 surface of low-doped n- and p-type Sisamples is studied in the liquid helium temperature region by thescanning-tunnelling microscopy and spectroscopy. Conduction required for thestudy is provided by illumination of the surface. Application of illuminationremoves completely the band bending near the surface and restores initialpopulation of the surface states. Our results indicate the existence of theenergy gap 2{\Delta} = 40 \pm 10 meV in intrinsically-populated Si(111)-7x7surface.

Energy gap revealed by low-temperature scanning-tunnelling spectroscopy of Si(111)-7x7 surface in illuminated slightly-doped crystals