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The present work aims to study the effect of ion irradiation on structuraland electrical properties and their correlation with the defects in Zn1-xMnxOtype system. Zn1-xMnxO (x = 0.02, 0.04) samples have been synthesized bysolid-state reaction method and have been irradiated with 50 MeV Li3+ ions. Theconcomitant changes have been probed by x-ray diffraction (XRD), temperaturedependent electrical resistivity and positron annihilation lifetime (PAL)spectroscopy. XRD result shows single phase wurtzite structure forZn0.98Mn0.02O, whereas for Zn0.96Mn0.04O sample an impurity phase has beenfound apart from the usual peaks of ZnO. Ion irradiation dissolves thisimpurity peak. Grain size of the samples found to be uniform. ForZn0.98Mn0.02O, the observed sharp decrease in room temperature resistivity(RhoRT) with irradiation is consistent with the lowering of FWHM of the XRDpeaks. However for Zn0.96Mn0.04O, RhoRT decreases for initial fluence butincreases for further increase of fluence. All the irradiated Zn0.98Mn0.02Osamples show metal-semiconductor transition in temperature dependentresistivity measurement at low temperature. But all the irradiatedZn0.96Mn0.04O samples show semiconducting nature in the whole range oftemperature. Results of room temperature resistivity, XRD and PAL measurementsare consistent with each other.

Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn doped ZnO