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The ground state energy and the extend of the wavefunction of a negativelycharged donor (D-) located near a semiconductor-metal or asemiconductor-dielectric interface is obtained. We apply the effective massapproximation and use a variational two-electron wavefunction that takes intoaccount the influence of all image charges that arise due to the presence ofthe interface, as well as the correlation between the two electrons bound tothe donor. For a semiconductor-metal interface, the D- binding energy isenhanced for donor positions d>1.5a_B (a_B is the effective Bohr radius) due tothe additional attraction of the electrons with their images. When the donorapproaches the interface (i.e. d<1.5a_B) the D- binding energy drops andeventually it becomes unbound. For a semiconductor-dielectric (or asemiconductor-vacuum) interface the D- binding energy is reduced for any donorposition as compared to the bulk case and the system becomes rapidly unboundwhen the donor approaches the interface.

D- shallow donor near a semiconductor-metal and a semiconductor-dielectric interface