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In the manganites $RE_{1-x}AE_{x}$MnO$_{3}$ ($RE$ and $AE$ being rare-earthand alkaline-earth elements, respectively) the random distribution of $RE^{3+}$and $AE^{2+}$ induces random, but correlated, shifts of site energies of chargecarriers in the Mn sites. We consider a realistic model of this diagonaldisorder, in addition to the double-exchange hopping disorder, and investigatethe metal-insulator transition as a function of temperature, across theparamagnetic-ferromagnetic line, and as a function of doping $x$. Contrary toprevious results, we find that values of parameters, estimated from theelectronic structure of the manganites, are not incompatible with thepossibility of a disorder induced metal to insulator transition accompanyingthe ferromagnetic to paramagnetic transition at intermediate doping($x\sim0.2-0.4$). These findings indicate clearly that substitutional disorderhas to be considered as an important effect when addressing the colossalmagnetoresistance properties of manganites.

Substitutional disorder and charge localization in manganites