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We report measurements of magnetoresistance in single-layer graphene as afunction of gate voltage (carrier density) at 250 mK. By examining signaturesof weak localization (WL) and universal conductance fluctuations (UCF), we finda consistent picture of phase coherence loss due to electron-electroninteractions. The gate-dependence of the elastic scattering terms suggests thatthe effect of trigonal warping, i.e., the non-linearity of the dispersioncurves, may be strong at high carrier densities, while intra-valley scatteringmay dominate close to the Dirac point. In addition, a decrease in UCF amplitudewith decreasing carrier density can be explained by a corresponding loss ofphase coherence.

Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies