English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The substrate lattice structure may have a considerable influence on theformation of quantum well states in a metal overlayer material. Here we studythree model systems using angle resolved photoemission and low energy electrondiffraction: indium films on Si(111) and indium and lead on Si(100). Data arecompared with theoretical predictions based on density functional theory. Wefind that the interaction between the substrate and the overlayer stronglyinfluences the formation of quantum well states; indium layers only exhibitwell defined quantum well states when the layer relaxes from an initialface-centered cubic to the bulk body-centered tetragonal lattice structure. ForPb layers on Si(100) a change in growth orientation inhibits the formations ofquantum well states in films thicker than 2 ML.

Influence of the substrate lattice structure on the formation of Quantum Well States in thin In and Pb films on silicon