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Ultrafast lasing due to electron–hole plasma in ZnO nano-multipods
Author(s) -
S. Mitsubori,
Ikufumi Katayama,
S H Lee,
T. Yao,
Jun Takeda
Publication year - 2009
Publication title -
journal of physics condensed matter
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 228
eISSN - 1361-648X
pISSN - 0953-8984
DOI - 10.1088/0953-8984/21/6/064211
Subject(s) - lasing threshold , materials science , population inversion , femtosecond , stimulated emission , excitation , electron , band gap , optoelectronics , ultrashort pulse , laser , optics , physics , quantum mechanics , wavelength
Dynamics of stimulated emission and ultrafast lasing in ZnO nano-multipods has been investigated with femtosecond optical Kerr shutter technique. Under band-to-band excitation with high density, stimulated emission is observed around 395-400 nm with a mode-like structure. The stimulated emission emerges with an onset time of ~2 ps and then the intensity gradually decreases with time having a blue-shift and a spectral narrowing. The characteristics of the blue-shift and spectral narrowing suggest that not only recovery of bandgap renormalization but also conversion from an electron-hole plasma (EHP) state to high density excitonic state takes place as the carrier density decreases due to recombination of electrons with holes. The mode-like structure observed strongly indicates that a high quality resonant cavity is formed between the two facets toward the leg length direction of individual nano-multipod. These results show that the ultrafast lasing observed around 395-400 nm in ZnO nano-multipods comes from population inversion in the EHP regime. We also found that the initial carrier distribution of the EHP regime in nano-multipods is much wider than that in ZnO thin films, implying that the carrier diffusion might be suppressed by their nano-size structure

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