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We study theoretically the electronic properties of $c$-plane GaN/AlN quantumdots (QDs) with focus on their potential as sources of single polarized photonsfor future quantum communication systems. Within the framework of eight-bandk.p theory we calculate the optical interband transitions of the QDs and theirpolarization properties. We show that an anisotropy of the QD confinementpotential in the basal plane (e.g. QD elongation or strain anisotropy) leads toa pronounced linear polarization of the ground state and excited statetransitions. An externally applied uniaxial stress can be used to either inducea linear polarization of the ground-state transition for emission of singlepolarized photons or even to compensate the polarization induced by thestructural elongation.

GaN/AlN Quantum Dots for Single Qubit Emitters