English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Effect of doping with H and W on the properties of V2O5 and VO2 derived fromV2O5 gel has been studied. It is shown that the treatment of V2O5 inlow-temperature RF hydrogen plasma for 1 to 10 min. leads to either hydrationof vanadium pentoxide or its reduction (depending on the treatment conditions)to lower vanadium oxides. For some samples, which are subject to plasmatreatment in the discharge active zone, a non-ordinary temperature dependenceof resistance, with a maxi-mum at T ~ 100 K, is observed. For W-doped VO2films, it is shown that substitution of V4+ with W6+ results in a decrease ofthe temperature of metal-insulator transition. Also, it has been shown that thedoping of the initial films with ~3 at.% of W reduces the statistical scatterin the thresh-old parameters of the switching devices with S-shaped I-Vcharacteristics on the basis of V2O5 gel films.

Influence of doping on the properties of vanadium oxide gel films