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Low temperature specific heat has been investigated in a novel ternarysuperconductor La_{3}Pd_{4}Ge_{4} with an U_{3}Ni_{4}Si_{4}-type structureconsisting of the alternating BaAl_{4} (ThCr_{2}Si_{2})- and AlB$_{2}$-typelayers. A comparative study with the related ThCr_{2}Si_{2}-type superconductorLaPd_{2}Ge_{2}, one of the layers in La_{3}Pd_{4}Ge_{4}, is also presented.  From the normal state specific heat, the Sommerfeld coefficient $\gamma_{n} =27.0$ mJ/mol K^2 and the Debye temperature $\Theta_{\rm D}$ = 256 K are derivedfor the La_{3}Pd_{4}Ge_{4}, while those for the LaPd_{2}Ge_{2} are $\gamma_{n}=8.26$ mJ/mol K^2 and $\Theta_{\rm D}$ = 291 K. The La_{3}Pd_{4}Ge_{4} hasmoderately high electronic density of state at the Fermi level. Electroniccontribution on the specific heat, $C_{\rm el}$, in each compound is welldescribed by the BCS behavior, suggesting that both of the La_{3}Pd_{4}Ge_{4}and the LaPd_{2}Ge_{2} have fully opened isotropic gap in the superconductingstate.

Low temperature specific heat of La_{3}Pd_{4}Ge_{4} with U_{3}Ni_{4}Si_{4}-type structure