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The electronic structure of pulsed laser deposited Mo1-xFexO2 (x=0, 0.02 and0.05) thin films has been investigated using resonant photoemissionspectroscopy near Mo-4p absorption edge. In all the samples a broad Fano- likeresonance peak at ~46 eV is observed in the whole area of the valence bandwhich indicates the contribution of the Mo-4d states in the entire valence bandregion. The doping of Fe in these films leads to decrease in Mo 4d statescontributing to electronic states at lower binding energy region. In additionto this, we also observe a shoulder at 4.9 eV in the valence band spectra ofdoped samples. It is proposed that the origin of this shoulder is due to the Fehybridised states.

Electronic structure of Fe (0-5 at. %) doped MoO2 thin films studied by resonant photoemission spectroscopy