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Triggered by the revival of multiferroic materials, a lot of effort ispresently undergoing as to find a coupling between a capacitance and a magneticfield. We show in this report that interfaces are the right way of increasingsuch a coupling provided free charges are localized on these two-dimensionaldefects. Starting from commercial diodes at room temperature and going to grainboundaries in giant permittivity materials and to ferroelectric domain walls, aclear magnetocapacitance is reported which is all the time more than a fewpercent for a magnetic field of 90kOe. The only tuning parameter for suchstrong coupling to arise is the dielectric relaxation time which is reached ontuning the operating frequency and the temperature in many different materials.

Interface-driven magnetocapacitance in a broad range of materials