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We present the findings of the 0.7(2e2/h) feature in the hole quantumconductance staircase that is caused by silicon one-dimensional channelsprepared by the split-gate method inside the p-type silicon quantum well (SQW)on the n-type Si (100) surface. Firstly, the interplay of the spindepolarisation with the evolution of the 0.7(2e2/h) feature from the e2/h to3/2 e2/h values as a function of the sheet density of holes is revealed by thequantum point contact connecting two 2D reservoirs in the p-type SQW. The 1Dholes are demonstrated to be spin-polarised at low sheet density, because the0.7(2e2/h) feature is close to the value of 0.5(2e2/h) that indicates the spindegeneracy lifting for the first step of the quantum conductance staircase. The0.7(2e2/h) feature is found to take however the value of 0.75(2e2/h) when thesheet density increases thereby giving rise to the spin depolarisation of the1D holes. Secondly, the amplitude and phase sensitivity of the 0.7(2e2/h)feature are studied by varying the value of the external magnetic field and thetop gate voltage that are applied perpendicularly to the plane of thedouble-slit ring embedded in the p-type SQW, with the extra quantum pointcontact inserted in the one of its arms. The Aharonov-Bohm (AB) and theAharonov-Casher (AC) conductance oscillations obtained are evidence of theinterplay of the spontaneous spin polarisation and the Rashba spin-orbitinteraction (SOI) in the formation of the 0.7(2e2/h) feature. Finally, thevariations of the 0.7(2e2/h) feature caused by the Rashba SOI are found to takein the fractional form with both the plateaux and steps as a function of thetop gate voltage.

Phase and amplitude response of "0.7 feature" caused by holes in silicon one-dimensional wires and rings