English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report results of investigations of structural and transport properties ofGaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mnlayer, separated from the QW by a 3 nm thick spacer. The structure has holemobility of about 2000 cm2/(V*s) being by several orders of magnitude higherthan in known ferromagnetic two-dimensional structures. The analysis of theelectro-physical properties of these systems is based on detailed study oftheir structure by means of high-resolution X-ray diffractometry andglancing-incidence reflection, which allow us to restore the depth profiles ofstructural characteristics of the QWs and thin Mn containing layers. Theseinvestigations show absence of Mn atoms inside the QWs. The quality of thestructures was also characterized by photoluminescence spectra from the QWs.Transport properties reveal features inherent to ferromagnetic systems: aspecific maximum in the temperature dependence of the resistance and theanomalous Hall effect (AHE) observed in samples with both "metallic" andactivated types of conductivity up to ~100 K. AHE is most pronounced in thetemperature range where the resistance maximum is observed, and decreases withdecreasing temperature. The results are discussed in terms of interaction of2D-holes and magnetic Mn ions in presence of large-scale potential fluctuationsrelated to random distribution of Mn atoms. The AHE values are compared withcalculations taking into account its "intrinsic" mechanism in ferromagneticsystems.

Structural and transport properties of GaAs/delta/GaAs/InxGa1-xAs/GaAs quantum wells