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We performed optical-pump terahertz-probe measurements of a Mott insulatorYTiO$_{3}$ and a band semiconductor Si using a laser diode (1.47 eV) and afemtosecond pulse laser (1.55 eV). Both samples possess long energy-relaxationtimes (1.5 ms for YTiO$_{3}$ and 15 $\mu$s for Si); therefore, it is possibleto extract terahertz complex conductivities of photoinduced carriers underequilibrium. We observed highly contrasting behavior - Drude conductivity in Siand localized conductivity possibly obeying the Jonscher law in YTiO$_{3}$. Thecarrier number at the highest carrier-concentration layer in YTiO$_{3}$ isestimated to be 0.015 per Ti site. Anisotropic conductivity of YTiO$_{3}$ isdetermined. Our study indicates that localized carriers might play an importantrole in the incipient formation of photoinduced metallic phases in Mottinsulators. In addition, this study shows that the transfer-matrix method iseffective for extracting an optical constant of a sample with a spatiallyinhomogeneous carrier distribution.

journal of physics. condensed matter

Terahertz conductivity of localized photoinduced carriers in Mott  insulator YTiO$_{3}$ at low excitation density, contrasted with metallic  nature in band semiconductor Si