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We calculate the intensity of the polariton mediated inelastic lightscattering in semiconductor microcavities. We treat the exciton-photon couplingnonperturbatively and incorporate lifetime effects in both excitons andphotons, and a coupling of the photons to the electron-hole continuum. Takingthe matrix elements as fitting parameters, the results are in excellentagreement with measured Raman intensities due to optical phonons resonant withthe upper polariton branches in II-VI microcavities with embedded CdTe quantumwells.

Theory of polariton mediated Raman scattering in microcavities