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This paper reviews the present understanding of the origin of ferromagneticresponse of diluted magnetic semiconductors and diluted magnetic oxides as wellas in some nominally magnetically undoped materials. It is argued that thesesystems can be grouped into four classes. To the first belong compositematerials in which precipitations of a known ferromagnetic, ferrimagnetic orantiferromagnetic compound account for magnetic characteristics at hightemperatures. The second class forms alloys showing chemical nano-scale phaseseparation into the regions with small and large concentrations of the magneticconstituent. To the third class belong (Ga,Mn)As, heavily doped p-(Zn,Mn)Te,and related semiconductors. In these solid solutions the theory built on p-dZener's model of hole-mediated ferromagnetism and on either the Kohn-Luttingerkp theory or the multi-orbital tight-binding approach describes qualitatively,and often quantitatively many relevant properties. Finally, in a number ofcarrier-doped DMS and DMO a competition between long-range ferromagnetic andshort-range antiferromagnetic interactions and/or the proximity of thelocalisation boundary lead to an electronic nano-scale phase separation.

Origin of ferromagnetic response in diluted magnetic semiconductors and oxides