English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We calculate the electron exchange coupling for a phosphorus donor pair insilicon perturbed by a J-gate potential and the boundary effects of the siliconhost geometry. In addition to the electron-electron exchange interaction wealso calculate the contact hyperfine interaction between the donor nucleus andelectron as a function of the varying experimental conditions. Donorseparation, depth of the P nuclei below the silicon oxide layer and J-gatevoltage become decisive factors in determining the strength of both theexchange coupling and the hyperfine interaction - both crucial components forqubit operations in the Kane quantum computer. These calculations wereperformed using an anisotropic effective-mass Hamiltonian approach. Thebehaviour of the donor exchange coupling as a function of the device parametersvaried provides relevant information for the experimental design of thesedevices.Comment: 15 pages, 15 figures. Accepted for Journal of Physics: Condensed  Matte

The effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture