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We account for lateral orderings of III-V nanostructures resulting from aGaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phaseepitaxy at two different temperatures. For both samples, the ordering isinduced by the stress field of a periodic dislocation network (DN) shallowlyburied and parallel to the surface. This DN is a grain boundary (GB) thatforms, between a thinGaAs layer (onwhich growthwas performed) and aGaAssubstrate joined together by wafer bonding, in order to accommodate a tilt anda twist between these two crystals; both these misorientations are imposed in acontrolled manner. This GB is composed of a one-dimensional network of mixeddislocations and of a one-dimensional network of screwdislocations. For bothsamples, the nanostructures observed by transmission electronmicroscopy (TEM)and atomic forcemicroscopy are ordered by the underlyingDNobserved byTEMsincethey have same dimensions andorientations as the cells of the DN

Long-range ordering of III–V semiconductor nanostructures by shallowly buried dislocation networks