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Motivated by applications to quantum computer architectures we study thechange in the exchange interaction between neighbouring phosphorus donorelectrons in silicon due to the application of voltage biases to surfacecontrol electrodes. These voltage biases create electro-static fields withinthe crystal substrate, perturbing the states of the donor electrons and thusaltering the strength of the exchange interaction between them. We find thatcontrol gates of this kind can be used to either enhance, or reduce thestrength of the interaction, by an amount that depends both on the magnitudeand orientation of the donor separation.Comment: 5 Pages, 5 Figure

Voltage control of exchange coupling in phosphorus doped silicon