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Free carrier capture by a screened Coulomb potential in semiconductors areconsidered. It is established that with decreasing screening radius the capturecross section decreases drastically, and it goes to zero when $% r_s=a_B^{*}$.On the basis of this result a new mechanism of shallow impurity electric fieldbreak down in semiconductors is suggested.Comment: 8 pages, latex, 1 figure in gif format, to be submitted to "Journal  of Condensed Matter

Capture of carriers by screened charged centres and low-temperature shallow-impurity electric field breakdown in semiconductors