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We report measured rate coefficients for electron-ion recombination for Si10+forming Si9+ and for Si9+ forming Si8+, respectively. The measurements wereperformed using the electron-ion merged-beams technique at a heavy-ion storagering. Electron-ion collision energies ranged from 0 to 50 eV for Si9+ and from0 to 2000 eV for Si10+, thus, extending previous measurements for Si10+ [Orbanet al. 2010, Astrophys. J. 721, 1603] to much higher energies. Experimentallyderived rate coefficients for the recombination of Si9+ and Si10+ ions in aplasma are presented along with simple parameterizations. These ratecoefficients are useful for the modeling of the charge balance of silicon inphotoionized plasmas (Si9+ and Si10+) and in collisionally ionized plasmas(Si10+ only). In the corresponding temperature ranges, the experimentallyderived rate coefficients agree with the latest corresponding theoreticalresults within the experimental uncertainties.

Absolute rate coefficients for photorecombination of berylliumlike and boronlike silicon ions