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We have developed a combined photolithography and electron-beam lithographyfabrication process for sub-\mum to \mum-size Nb/Al-AlOx/Nb Josephsonjunctions. In order to define the junction size and protect its top electrodeduring anodic oxidation, we developed and used the new concept of an aluminumhard mask. Josephson junctions of sizes down to 0.5 \mum2 have been fabricatedand thoroughly characterized. We found that they have a very high quality,which is witnessed by the IV curves with quality parameters Vm > 50 mV and Vgap= 2.8 mV at 4.2 K, as well as IcRN products of 1.75-1.93 mV obtained at lowertemperatures. In order to test the usability of our fabrication process forsuperconducting quantum bits, we have also designed, fabricated andexperimentally investigated phase qubits made of these junctions. We found arelaxation time of T1 = 26 ns and a dephasing time of T2 = 21 ns.

Aluminum Hard Mask Technique for the Fabrication of High-Quality Submicron Nb/Al-AlOx/Nb Josephson Junctions