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Within the context of superconducting gap engineering, Al-\alox-Al tunneljunctions have been used to study the variation in superconducting gap,$\Delta$, with film thickness. Films of thickness 5, 7, 10 and 30 nm were usedto form the small area superconductor-insulator-superconductor (SIS) tunneljunctions. In agreement with previous measurements we have observed an increasein the superconducting energy gap of aluminium with a decrease in filmthickness. In addition, we find grain size in small area films with thickness\textbf{$\geq$} 10 nm has no appreciable effect on energy gap. Finally, weutilize 7 and 30 nm films in a single Cooper-pair transistor, and observe themodification of the finite bias transport processes due to the engineered gapprofile.

Energy gap measurement of nanostructured thin aluminium films for use in single Cooper-pair devices