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In order to integrate superconducting qubits with rapid-single-flux-quantum(RSFQ) control circuitry, it is necessary to develop a fabrication process thatfulfills at the same time the requirements of both elements: low criticalcurrent density, very low operating temperature (tens of milliKelvin) andreduced dissipation on the qubit side; high operation frequency, largestability margins, low dissipated power on the RSFQ side. For this purpose, VTThas developed a fabrication process based on Nb trilayer technology, whichallows the on-chip integration of superconducting qubits and RSFQ circuits evenat very low temperature. Here we present the characterization (at 4.2 K) of theprocess from the point of view of the Josephson devices and show that they aresuitable to build integrated superconducting qubits

Characterization of a fabrication process for the integration of superconducting qubits and rapid-single-flux-quantum circuits