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We report a new in-situ reactive deposition thin film growth technique forthe production of MgB2 thin films which offers several advantages over allexisting methods and is the first deposition method to enable the production ofhigh-quality MgB2 films for real-world applications. We have used this growthmethod, which incorporates a rotating pocket heater, to deposit MgB2 films on avariety of substrates, including single-crystalline, polycrystalline, metallic,and semiconductor materials up to 4" in diameter. This technique allows growthof double-sided, large-area films in the intermediate temperature range of 400to 600 degrees C. These films are clean, well-connected, and consistentlydisplay Tc values of 38 to 39 K with low resistivity and residual resistivityvalues. They are also robust and uncommonly stable upon exposure to atmosphereand water.Comment: Submitted to Superconductor Science and Technolog

Growth of high-quality large-area MgB2thin films by reactive evaporation

Growth of high-quality large-area MgB₂thin films by reactive evaporation