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MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) andex-situ annealing in Mg atmosphere. The films presented critical temperaturesup to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut)and MgO(100) substrates. Synchrotron analyses gave also some indications of inplane texturing. The films exhibit very fine grain size (1200angstromin thebasal plane and 100angstrom along c-axis) but the general resistivity behaviorand the remarkable extension of the irreversible region confirm that the grainsboundaries are not barriers for supercurrents. Upper critical fieldmeasurements with the magnetic field perpendicular and parallel with respect tothe film surface evidenced a field anisotropy ratio of 1.8. The Hc2 values areconsiderably higher with respect to the bulk ones, namely when the field liesin the basal plane, and the field-temperature phase diagram for the twomagnetic field orientations suggest the possibility of strongly enhancing thepinning region by means of texturing.Comment: 20 pages, 6 figure

Growth ofc-oriented MgB2thin films by pulsed laser deposition: structural characterization and electronic anisotropy

Growth ofc-oriented MgB₂thin films by pulsed laser deposition: structural characterization and electronic anisotropy