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We have measured the effective mass, m, and Lande g-factor in very dilutetwo-dimensional electron systems in silicon. Two independent methods have beenused: (i) measurements of the magnetic field required to fully polarize theelectrons' spins and (ii) analysis of the Shubnikov-de Haas oscillations. Wehave observed a sharp increase of the effective mass with decreasing electrondensity while the g-factor remains nearly constant and close to its value inbulk silicon. The corresponding strong rise of the spin susceptibility may be aprecursor of a spontaneous spin polarization; unlike in the Stoner scenario, itoriginates from the enhancement of the effective mass rather than the increaseof g-factor. Furthermore, using tilted magnetic fields, we have found that theenhanced effective mass is independent of the degree of spin polarization and,therefore, its increase is not related to spin exchange effects, incontradiction with existing theories. Our results show that the dilute 2Delectron system in silicon behaves well beyond a weakly interacting Fermiliquid.Comment: This paper summarizes results reported in our recent publications on  the subjec

Sharply increasing effective mass: a precursor of a spontaneous spin polarization in a dilute two-dimensional electron system