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Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxyand characterized by transmission and scanning electron microscopy, and x-raydiffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001)oriented single crystal. The subsequent Al film grows almost 111 oriented in afibre texture although the underlying Fe3Si is exactly (001) oriented. Thegrowth in this orientation is triggered by a thin transition region which isformed at the Fe3Si/Al interface. In the end after the growth of the secondFe3Si layer on top of the Al the final properties of the whole stack depend onthe substrate temperature T_S during deposition of the last film. The upperFe3Si films are mainly 110 oriented although they are poly-crystalline. Atlower T_S, around room temperature, all the films retain their originalstructural properties.

Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001)