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We have studied the high-frequency properties of the non-equilibrium electrongas in GaN samples subjected to electric and magnetic fields. Spectra of thecomplex tensor of the dynamical mobility have been calculated for THz frequencyrange. For the compensated GaN and low temperatures, in the intervals ofelectric fields of the few $kV/cm$ and magnetic fields of the few $T$ theexistence of the cyclotron and optical phonon transit-time resonances has beenidentified. We have shown that interplay of two resonances gives rise tospecific spectra of THz transmission and absorption (or gain). We suggest thatexperimental investigation of these effects will facilitate elaboration offield controlled devices for THz optoelectronics.

High-frequency response of GaN in moderate electric and magnetic fields: Interplay between cyclotron and optical phonon transient time resonances