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Due to large difference in effective masses of light and heavy holes it isusually supposed that the above-barrier current in Schottky barriers on p-typesemiconductor is controlled only by the heavy holes. However, in realstructures, there is an additional potential barrier caused by a oxide layer atinterface. For typical values of thickness and height of a barrier its tunneltransparency for light holes can be higher by three order of magnitude thanthat for heavy holes. Due to such separative role of insulator layer one canexpect that the current is manly a contribution of light holes. To clear upthis problem the investigation of transport in a magnetic field is used as akey experiment in this work. The pronounced magnetic field effect for heavyholes in investigated Pb-p-HgCdTe Schottky barriers is expected only atextremely strong magnetic fields B>10 T within the framework of both diode anddiffusion mechanism of transport. At the same time experimentally more thantwofold decrease in saturation current is observed even at B=0.5 T at anyorientation of magnetic field. The studies performed for HgCdTe with differentKane's gap and at different temperatures show that the magnitude of magneticfield effect is uniquely determined by the ratio of light hole cyclotron energyto a thermal energy. However the magnitude of effect exceeds considerably theprediction of the simple theory and the experimental magnetic fielddependencies of a saturation current do not follow the simple exponentialfalling predicted for thermionic current. The reason of this discrepancyremains a mystery.

Strong magnetic field effect on above-barrier transport in Pb-p-HgCdTe Schottky barriers