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Real-space mapping of doping concentration in semiconductor devices is ofgreat importance for the microelectronic industry. In this work, a scanningmicrowave impedance microscope (MIM) is employed to resolve the localconductivity distribution of a static random access memory (SRAM) sample. TheMIM electronics can also be adjusted to the scanning capacitance microscopy(SCM) mode, allowing both measurements on the same region. Interestingly, whilethe conventional SCM images match the nominal device structure, the MIM resultsdisplay certain unexpected features, which originate from a thin layer of thedopant ions penetrating through the protective layers during the heavyimplantation steps.

Unexpected Surface Implanted Layer in Static Random Access Memory Devices Observed by Microwave Impedance Microscope