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Angle-resolved photoelectron spectroscopy is used for a detailed study of theelectronic structure of the topological insulator Bi2Se3. Nominallystoichiometric and calcium-doped samples were investigated. The pristinesurface shows the topological surface state in the bulk band gap. As timepasses, the Dirac point moves to higher binding energies, indicating anincreasingly strong downward bending of the bands near the surface. Thistime-dependent band bending is related to a contamination of the surface andcan be accelerated by intentionally exposing the surface to carbon monoxide andother species. For a sufficiently strong band bending, additional states appearat the Fermi level. These are interpreted as quantised conduction band states.For large band bendings, these states are found to undergo a strong Rashbasplitting. The formation of quantum well states is also observed for thevalence band states. Different interpretations of similar data are alsodiscussed.

The electronic structure of clean and adsorbate-covered Bi2Se3: an angle-resolved photoemission study