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Modulation doped GaAs-AlGaAs quantum well based structures are usually usedto achieve very high mobility 2-dimensional electron (or hole) gases. Usuallyhigh mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved athigh densities. A loss of linear gateability is often associated with thehighest mobilites, on account of a some residual hopping or parallel conductionin the doped regions. We have developed a method of using fully undopedGaAs-AlGaAs quantum wells, where densities$\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fullylinear and non-hysteretic gateability. We use these devices to understand thepossible mobility limiting mechanisms at very high densities.

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure