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This paper presents a brief review of scanning-gate microscopy applied to theimaging of electron transport in buried semiconductor quantum structures. Afteran introduction to the technique and to some of its practical issues, wesummarise a selection of its successful achievements found in the literature,including our own research. The latter focuses on the imaging of GaInAs-basedquantum rings both in the low magnetic field Aharonov-Bohm regime and in thehigh-field quantum Hall regime. Based on our own experience, we then discuss indetail some of the limitations of scanning-gate microscopy. These includepossible tip induced artefacts, effects of a large bias applied to the scanningtip, as well as consequences of unwanted charge traps on the conductance maps.We emphasize how special care must be paid in interpreting these scanning-gateimages.

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations