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We review recent studies of the shot noise of spin-polarized charge currentsand pure spin currents in multiterminal semiconductor nanostructures, whilefocusing on the effects brought by the intrinsic Rashba spin-orbit (SO)coupling and/or extrinsic SO scattering off impurities in two-dimensionalelectron gas (2DEG) based devices. By generalizing the scattering theory ofquantum shot noise to include the full spin-density matrix of electronsinjected from a spin-filtering electrode, we show how decoherence and dephasingin the course of spin precession can lead to substantial enhancement of theFano factor (noise-to-current ratio) of spin-polarized charge currents. Infour-terminal SO-coupled nanostructures, injection of unpolarized chargecurrent through the longitudinal leads is responsible not only for the purespin Hall current in the transverse leads, but also for nonequilibrium randomtime-dependent current fluctuations. The analysis of the shot noise oftransverse pure spin Hall current and zero charge current, or transverse spincurrent and non-zero charge Hall current, driven by unpolarized orspin-polarized injected longitudinal charge current, respectively, reveals aunique experimental tool to differentiate between the intrinsic Rashba andextrinsic SO mechanisms underlying the spin Hall effect in 2DEG devices.Finally, we discuss the shot noise of transverse spin and zero charge currentsin the quantum-interference-driven spin Hall effect in ballistic four-terminalAharonov-Casher rings realized using high-mobility 2DEG with the Rashba SOcoupling.

What can we learn about the dynamics of transported spins by measuring shot noise in spin-orbit-coupled nanostructures?