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We report fabrication of transistors in a FinFET geometry using isotopicallypurified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spincoherence in natural silicon is limited by spectral diffusion due to theresidual $^{29}$Si nuclear spin bath, making isotopically enriched nuclearspin-free $^{28}$Si substrates a promising candidate for forming spin quantumbit devices. The FinFET architecture is fully compatible with single-ionimplant detection for donor-based qubits, and the donor spin-state readoutthrough electrical detection of spin resonance. We describe device processingsteps and discuss results on electrical transport measurements at 0.3 K.

Device fabrication and transport measurements of FinFETs built with $^{28}$Si SOI wafers towards donor qubits in silicon