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Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecularbeam epitaxy on GaAs (001) substrates. Some of the structures also containedcubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion MassSpectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN,the Mn being uniformly distributed through the layer. X-ray diffraction studiesdemonstrated that the Mn-doped GaN films are cubic and do not show phaseseparation up to a Mn concentrations of x<0.1. P-type conductivity for thecubic Ga1-xMnxN layers was observed for a wide range of the Mn doping levels.The measured hole concentration at room temperature depends non-linearly on theMn incorporation and varies from 3x10^16 to 5x10^18 cm-3.Comment: 7 pages, 3 figure

P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy